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2SB1302

ON Semiconductor
Part Number 2SB1302
Manufacturer ON Semiconductor
Description Bipolar Transistor
Published Jun 25, 2015
Detailed Description DATA SHEET www.onsemi.com Bipolar Transistor –20 V, –5 A, Low VCE(sat), PNP Single PCP 2SB1302 Features • Adoption of ...
Datasheet PDF File 2SB1302 PDF File

2SB1302
2SB1302

Overview
DATA SHEET www.
onsemi.
com Bipolar Transistor –20 V, –5 A, Low VCE(sat), PNP Single PCP 2SB1302 Features • Adoption of FBET, MBIT Processes • Large Current Capacity • Ultrasmall Size Making it Easy to Provide High−Density Small−Sized Hybrid IC’s • Low Collector to Emitter Saturation Voltage • Fast Switching Speed • These Devices are Pb−Free and are RoHS Compliant Applications • DC−DC Converters, Motor Drivers, Relay Drivers, Lamp Drivers SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Value Unit Collector to Base Voltage VCBO −25 V Collector to Emitter Voltage VCEO −20 V Emitter to Base Voltage VEBO −5 V Collector Current IC −5 A Collector Current (Pulse) ICP −8 A Collector Dissipation (Note 1) PC 1.
3 W Junction Temperature TJ 150 °C Storage Temperature TSTG −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Surface mounted on ceramic substrate (250 mm2 x 0.
8 mm).
1 2 3 SOT−89 / PCP−1 CASE 419AU ELECTRICAL CONNECTION 2 1 3 1: Base 2: Collector 3: Emitter MARKING DIAGRAM BJ LOT No.
RANK ORDERING INFORMATION Device 2SB1302S−TD−E 2SB1302T−TD−E Package PCP (Pb−Free) PCP (Pb−Free) Shipping† 1000 / Tape & Reel 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013 1 January, 2023 − Rev.
2 Publication Order Number: 2SB1302/D 2SB1302 ELECTRICAL CHARACTERISTICS at TA = 25°C Ratings Parameter Symbol Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = −20 V, IE = 0 A −500 nA Emitter Cutoff Current IEBO VEB = −4V, IC = 0 A −500 nA DC Current Gain hFE1 VCE = −2 V, IC = −500 mA 140* 400* hFE2 VCE = −2 V, ...


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