HG Semiconductors The RF Line
2N6439HG RF POWER
TRANSISTOR
ROHS Compliance,Silicon
NPN POWER
TRANSISTOR
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designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range.
ω Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimum Gain = 7.
8 dB @ 400 MHz
ω Built–In Matching Network for Broadband Operation Using Double Match Technique
ω 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
ω Gold Metallization System for High Reliability Applications
60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER
TRANSISTOR NPN SILICON
CASE 316–01, STYLE 1
MAXIMUM RATINGS...