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2N6401

ON Semiconductor
Part Number 2N6401
Manufacturer ON Semiconductor
Description Silicon Controlled Rectifiers
Published Mar 22, 2005
Detailed Description 2N6400 Series Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control app...
Datasheet PDF File 2N6401 PDF File

2N6401
2N6401

Overview
2N6400 Series Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed.
Features • Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 V • These are Pb−Free Devices MAXIMUM RATINGS* (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = *40 to 125°C, Sine Wave 50 to 60 Hz; Gate Open) 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405 VDRM, VRRM 50 100 200 400 600 800 V On-State Current RMS (180° Conduction Angles; TC = 100°C) Average On-State Current (180° Conduction Angles; TC = 100°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 25°C) Circuit Fusing Considerations (t = 8.
3 ms) IT(RMS) IT(AV) ITSM I2t 16 10 160 145 A A A A2s Forward Peak Gate Power (Pulse Width ≤ 1.
0 ms, TC = 100°C) Forward Average Gate Power (t = 8.
3 ms, TC = 100°C) Forward Peak Gate Current (Pulse Width ≤ 1.
0 ms, TC = 100°C) Operating Junction Temperature Range PGM PG(AV) IGM TJ 20 0.
5 2.
0 −40 to +125 W W A °C Storage Temperature Range Tstg −40 to °C +150 Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
VDRM and VRRM for all types can be applied on a continuous basis.
Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ra...


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