DU2880U
RF Power MOSFET
Transistor 80 W, 2 - 175 MHz, 28 V
Features
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance
VDS VGS IDS PD TJ TSTG θJC
65 20 16 206 200 -65 to +150 0.
85
Units V V A W °C °C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
ZIN (Ω)
ZLOAD (Ω)
30
5.
4 - j4.
4
5.
7 +j4.
7
50
2.
5 - j4.
4
3.
4 + j3.
5
100
1.
6 - j3.
4
2.
4 + j2.
4
175
0.
7 - ...