LF2805A
RF Power MOSFET
Transistor 5 W, 500 - 1000 MHz, 28 V
Features
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor Applications
Broadband linear operation 500 MHz to 1400 MHz RoHS Compliant
Absolute Maximum Ratings @ 25°C
Parameter
Symbol
Rating
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance
VDS VGS IDS PD TJ TSTG θJC
65 20 1.
4 14.
4 200 -65 to +150 12.
1
Units V V A W °C °C
°C/W
Typical Device Impedance
F (MHz) 500
ZIN (Ω) 4.
3 - j29.
0
ZLOAD (Ω) 27.
3 +j28.
6
1000
2.
2 - j2.
75
8.
0 + ...