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LF2802A

MA-COM
Part Number LF2802A
Manufacturer MA-COM
Description RF Power MOSFET Transistor
Published Aug 21, 2017
Detailed Description LF2802A RF Power MOSFET Transistor 2 W, 500 - 1000 MHz, 28 V Features  N-Channel enhancement mode device  DMOS struc...
Datasheet PDF File LF2802A PDF File

LF2802A
LF2802A

Overview
LF2802A RF Power MOSFET Transistor 2 W, 500 - 1000 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  Common source configuration  Lower noise floor  Applications Broadband linear operation 500 MHz to 1400 MHz  RoHS Compliant Absolute Maximum Ratings @ 25°C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 0.
7 8 200 -55 to +150 21.
8 Units V V A W °C °C °C/W Typical Device Impedance F (MHz) 500 ZIN (Ω) 10.
0 - j41.
5 ZLOAD (Ω) 40.
0 +j53.
0 1000 4.
2 - j12.
0 11.
85 + ...


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