PH2729-110M
Radar Pulsed Power
Transistor 110W, 2.
7-2.
9 GHz, 100µs Pulse, 10% Duty
Features
NPN silicon microwave power
transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant
Outline Drawing
Rev.
V1
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature
Symbol
VCES VEBO
IC PTOT TSTG
TJ
Rating
63 3.
0 8.
0 330 -65 to +200 200
Units
V V A W °C...