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PH2729-110M

MA-COM
Part Number PH2729-110M
Manufacturer MA-COM
Description Radar Pulsed Power Transistor
Published Aug 29, 2017
Detailed Description PH2729-110M Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features  NPN silicon microwave powe...
Datasheet PDF File PH2729-110M PDF File

PH2729-110M
PH2729-110M

Overview
PH2729-110M Radar Pulsed Power Transistor 110W, 2.
7-2.
9 GHz, 100µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common base configuration  Broadband Class C operation  High efficiency inter-digitized geometry  Diffused emitter ballasting resistors  Gold metallization system  Internal input and output impedance matching  Hermetic metal/ceramic package  RoHS compliant Outline Drawing Rev.
V1 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 63 3.
0 8.
0 330 -65 to +200 200 Units V V A W °C °C Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Collector-Emitter Breakdown Voltage IC = 50mA Collector-Emitter Leakage Current VCE = 36V Thermal Resistance Vcc = 36V, Pin = 23W Output Power Vcc = 36V, Pin = 23W Power Gain Vc...


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