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BUK456-60H

Part Number BUK456-60H
Manufacturer NXP
Description PowerMOS transistor
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product Specification PowerMOS transistor BUK456-60H GENERAL DESCRIPTION N-channel enhancemen...
Datasheet BUK456-60H




Overview
Philips Semiconductors Product Specification PowerMOS transistor BUK456-60H GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.
The device is intended for use in Automotive and general purpose switching applications.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX.
60 60 150 175 20 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL V...






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