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BUK456-60B

Part Number	BUK456-60B
Manufacturer	NXP
Description	PowerMOS transistor
Published	Mar 23, 2005
Detailed Description	Philips Semiconductors Product Specification PowerMOS transistor BUK456-60A/B GENERAL DESCRIPTION N-channel enhancem...
Datasheet	BUK456-60B PDF File

Overview

Philips Semiconductors Product Specification PowerMOS transistor BUK456-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK456 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX.
-60A 60 52 150 175 0.
028 MAX.
-60B 60 51 150 175 0.
03 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION P...

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