Philips Semiconductors
Product specification
PowerMOS
transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power
transistor in a plastic envelope suitable for surface mount applications.
The device is intended for use in automotive and general purpose switching applications.
BUK564-60H
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX.
60 39 125 175 42 UNIT V A W ˚C mΩ
PINNING - SOT404
PIN 1 2 3 mb gate drain DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
source drain
1
2 3
s
LIMITING VALUES
Limi...