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BUK564-60H

Part Number	BUK564-60H
Manufacturer	NXP
Description	PowerMOS transistor Logic level FET
Published	Mar 23, 2005
Detailed Description	Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhance...
Datasheet	BUK564-60H PDF File

Overview

Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.
The device is intended for use in automotive and general purpose switching applications.
BUK564-60H QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX.
60 39 125 175 42 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g source drain 1 2 3 s LIMITING VALUES Limi...

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BUK564-60H PowerMOS transistor Logic level FET - NXP

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