BUL770
NPN SILICON POWER
TRANSISTOR
Copyright © 1997, Power Innovations Limited, UK JULY 1991 - REVISED SEPTEMBER 1997
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Designed Specifically for High Frequency Electronic Ballasts up to 50 W hFE 7 to 21 at VCE = 1 V, IC = 800 mA Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible Parametric Distributions
B C E
TO-220 PACKAGE (TOP VIEW)
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1 2 3
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Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted)
RATING Collector-emitter voltage (V BE = 0) Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Con...