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BUL70A

Seme LAB
Part Number BUL70A
Manufacturer Seme LAB
Description NPN Transistor
Published Mar 23, 2005
Detailed Description LAB MECHANICAL DATA Dimensions in mm 0.32 0.24 SEME BUL70A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED N...
Datasheet PDF File BUL70A PDF File

BUL70A
BUL70A

Overview
LAB MECHANICAL DATA Dimensions in mm 0.
32 0.
24 SEME BUL70A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 13° 0.
10 0.
02 16° max.
1.
70 max.
10° max.
6.
7 6.
3 3.
1 2.
9 Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE • FAST SWITCHING • HIGH ENERGY RATING • SURFACE MOUNT FOOT PRINT 4 3.
7 7.
3 3.
3 6.
7 1 2 3 1.
05 0.
85 2.
30 4.
60 0.
80 0.
60 FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
• Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
• Triple Guard Rings for improved control of high voltages.
SOT-223 Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter Pin 4 - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc.
Collector – Base Voltage(IE=0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range Telephone (01455) 556565.
Telex: 341927.
Fax (01455) 552612.
1000V 500V 10V 4A 7A 2A 3W –55 to +150°C Prelim.
2/97 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO SEME BUL70A Test Conditions Min.
500 1000 10 Typ.
Max.
Unit ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Base Cut–Off Current Collector – Emitter Cut–Off Current Emitter Cut–Off Current IC = 1mA IE = 1mA VCB = 1000V TC = 125°C IB = 0 VEB = 9V IC = 0 IC = 0.
1A IC = 0.
5A IC = 1A IC = 100mA TC = 125°C VCE = 5V VCE = 5V VCE = 1V TC = 125°C IB = 20mA IB = 0.
1A IB = 0.
2A IB = 0.
1A IB = 0.
2A VCE = 4V f = 1MHz VCE = 500V V 10 100 100 10 100 µA µA µA ...


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