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GPT13N65D

POWER FIELD EFFECT TRANSISTOR

Description

GENERAL DESCRIPTION GPT13N65 / GPT13N65D POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effici...


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