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GPT13N65

Greatpower
Part Number GPT13N65
Manufacturer Greatpower
Description POWER FIELD EFFECT TRANSISTOR
Published Nov 8, 2017
Detailed Description GENERAL DESCRIPTION GPT13N65 / GPT13N65D POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advan...
Datasheet PDF File GPT13N65 PDF File

GPT13N65
GPT13N65

Overview
GENERAL DESCRIPTION GPT13N65 / GPT13N65D POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
PIN CONFIGURATION  Robust High Voltage Termination  Avalanche Energy Specified  Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode  Diode is Characterized for Use in Bridge Circuits  IDSS and VDS(...


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