0.
5 – 12 GHz Low Noise Gallium Arsenide FET
Technical Data
ATF-10136
Features
• Low Noise Figure: 0.
5 dB Typical at 4 GHz
• Low Bias: VDS = 2 V, IDS = 20 mA
• High Associated Gain: 13.
0 dB Typical at 4 GHz
• High Output Power: 20.
0 dBm Typical P1 dB at 4 GHz
• Cost Effective Ceramic Microstrip Package
• Tape-and Reel Packaging Option Available [1]
Description
The ATF-10136 is a high performance gallium arsenide
Schottky-barriergate field effect
transistor housed in a cost effective microstrip package.
Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.
5-12 GHz frequency range.
This GaAs FET device has a nominal 0.
3 ...