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ATF-10100

HP
Part Number ATF-10100
Manufacturer HP
Description 0.5-12 GHz Low Noise Gallium Arsenide FET
Published Nov 8, 2017
Detailed Description 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.5 dB Typical at 4 ...
Datasheet PDF File ATF-10100 PDF File

ATF-10100
ATF-10100

Overview
0.
5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.
5 dB Typical at 4 GHz • Low Bias: VDS =2V,IDS␣ =␣ 25mA • High Associated Gain: 14.
0 dB Typical at 4 GHz • High Output Power: 21.
0 dBm Typical P1 dB at 4 GHz Description The ATF-10100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip.
Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.
5-12␣ GHz frequency range.
This GaAs FET device has a nominal 0.
3 micron gate length interconnects between drain fingers.
Total gate periphery is 500␣ microns.
Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
Chip Outline G SD G S Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions[1] NFO Optimum Noise Figure: VCE = 2 V, IDS = 25 mA f = 2.
0 GHz f = 4.
0 GHz f = 6.
0 GHz GA Gain @ NFO; VDS = 2 V, IDS...


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