2 – 8 GHz Medium Power Gallium Arsenide FET
Technical Data
ATF-45101
Features
• High Output Power: 29.
0␣ dBm Typical P 1dB at 4␣ GHz
• High Gain at 1dB Compression: 10.
0␣ dB Typical G 1dB at 4␣ GHz
• High Power Efficiency: 38% Typical at 4␣ GHz
• Hermetic Metal-Ceramic Stripline Package
Description
The ATF-45101 is a gallium arsenide
Schottky-barrier-gate field effect
transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency
range.
This nominally 0.
5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers.
Total gate periphery is 2.
5 millimeters.
Proven gold based metallization systems and nitrid...