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ATF-45171

Part Number	ATF-45171
Manufacturer	HP
Description	2-8 GHz Medium Power Gallium Arsenide FET
Published	Nov 8, 2017
Detailed Description	2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45171 Features • High Output Power: 29.0␣ dBm Typical P...
Datasheet	ATF-45171 PDF File

Overview

2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45171 Features • High Output Power: 29.
0␣ dBm Typical P 1dB at 4␣ GHz • High Gain at 1dB Compression: 10.
5 dB Typical G1 dB at 4␣ GHz • High Power Efficiency: 38% Typical at 4␣ GHz • Hermetic Metal-Ceramic Stripline Package Description The ATF-45171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range.
This nominally 0.
5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers.
Total gate periphery is 2.
5 millimeters.
Proven gold based metallization systems and nitride...

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