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BUT11APX-1200

Part Number BUT11APX-1200
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 GENERAL DESCRIPTION Enh...
Datasheet BUT11APX-1200




Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 GENERAL DESCRIPTION Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value To...






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