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BUT11APX-1200

NXP
Part Number BUT11APX-1200
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 GENERAL DESCRIPTION Enh...
Datasheet PDF File BUT11APX-1200 PDF File

BUT11APX-1200
BUT11APX-1200

Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 GENERAL DESCRIPTION Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time CONDITIONS VBE = 0 V TYP.
0.
15 15.
5 170 MAX.
1200 1200 550 6 10 32 1.
0 300 UNIT V V V A A W V ns Ths ≤ 25 ˚C IC = 2 A; IB = 0.
4 A IC = 3 A; VCE = 5 V IC = 2.
5 A; IB1 = 0.
5 A PINNING - SOT186A PIN 1 2 3 base collec...


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