Part Number
|
IRFF430 |
Manufacturer
|
Seme LAB |
Description
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Dec 7, 2017 |
Detailed Description
|
2N6802 IRFF430
MECHANICAL DATA Dimensions in mm (inches)
8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355)
4.06 (0.16) ...
|
Datasheet
|
IRFF430
|
Overview
2N6802 IRFF430
MECHANICAL DATA Dimensions in mm (inches)
8.
64 (0.
34) 9.
40 (0.
37) 8.
01 (0.
315) 9.
01 (0.
355)
4.
06 (0.
16) 4.
57 (0.
18)
N–CHANNEL ENHANCEMENT MODE POWER MOSFET
12.
70 (0.
500)
min.
(00.
0.
8395)max.
0.
41 (0.
016) 0.
53 (0.
021)
dia.
5.
08 (0.
200) typ.
BVDSS ID(cont) RDS(on)
500V 2.
5 1.
5Ω
0.
74 (0.
029) 1.
14 (0.
045)
0.
71 (0.
028) 0.
53 (0.
021)
2 13
2.
54 (0.
100)
45°
TO39 – Package (TO-205AF)
Underside View
Pin 1 – Source Pin 2 – Gate
Pin 3 – Drain
FEATURES
• AVALANCHE ENERGY RATED • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current (V...
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