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IRFF430

Part Number	IRFF430
Manufacturer	Seme LAB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Dec 7, 2017
Detailed Description	2N6802 IRFF430 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) ...
Datasheet	IRFF430 PDF File

Overview

2N6802 IRFF430 MECHANICAL DATA Dimensions in mm (inches) 8.
64 (0.
34) 9.
40 (0.
37) 8.
01 (0.
315) 9.
01 (0.
355) 4.
06 (0.
16) 4.
57 (0.
18) N–CHANNEL ENHANCEMENT MODE POWER MOSFET 12.
70 (0.
500) min.
(00.
0.
8395)max.
0.
41 (0.
016) 0.
53 (0.
021) dia.
5.
08 (0.
200) typ.
BVDSS ID(cont) RDS(on) 500V 2.
5 1.
5Ω 0.
74 (0.
029) 1.
14 (0.
045) 0.
71 (0.
028) 0.
53 (0.
021) 2 13 2.
54 (0.
100) 45° TO39 – Package (TO-205AF) Underside View Pin 1 – Source Pin 2 – Gate Pin 3 – Drain FEATURES • AVALANCHE ENERGY RATED • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current (VGS = 10V , Tcase = 25°C) 2.
5A ID Continuous Drain Current (VGS = 10V , Tcase = 100°C) IDM Pulsed Drain Current 1 1.
5A 11A PD Power Dissipation @ Tcase = 25°C 25W Linear Derating Factor 0.
2W/°C EAS dv/dt Single Pulse Avalanche Energy 2 Peak Diode Recovery 3 0.
35...

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