Part Number
|
BSM200GB120DL |
Manufacturer
|
Siemens Semiconductor Group |
Description
|
IGBT |
Published
|
Mar 23, 2005 |
Detailed Description
|
BSM 200 GB 120 DL
IGBT Power Module Preliminary data • Low Loss IGBT • Low inductance halfbridge • Including fast free-...
|
Datasheet
|
BSM200GB120DL
|
Overview
BSM 200 GB 120 DL
IGBT Power Module Preliminary data • Low Loss IGBT • Low inductance halfbridge • Including fast free- wheeling diodes • Package with insulated metal base plate Type BSM 200 GB 120 DL Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
VCE
IC
Package HALF-BRIDGE 2
Ordering Code C67076-A2300-A70
1200V 340A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 340 200
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
680 400
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
1400
W + 150 -40 .
.
.
+ 125 ≤ 0.
09 ≤ 0.
18 2500 20 11 F 40 / 125 / 56 sec Vac mm K/W °C
TC = 25 °...
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