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BSM200GB120

Siemens Semiconductor Group
Part Number BSM200GB120
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BSM 200 GB 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Low inductance halfbridge • Including fast free-...
Datasheet PDF File BSM200GB120 PDF File

BSM200GB120
BSM200GB120

Overview
BSM 200 GB 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Low inductance halfbridge • Including fast free- wheeling diodes • Package with insulated metal base plate Type BSM 200 GB 120 DL Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package HALF-BRIDGE 2 Ordering Code C67076-A2300-A70 1200V 340A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 340 200 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 680 400 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 1400 W + 150 -40 .
.
.
+ 125 ≤ 0.
09 ≤ 0.
18 2500 20 11 F 40 / 125 / 56 sec Vac mm K/W °C TC = 25 °...


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