Part Number
|
BSM400GB60DN2 |
Manufacturer
|
Siemens Semiconductor Group |
Description
|
IGBT |
Published
|
Mar 23, 2005 |
Detailed Description
|
BSM 400 GB 60 DN2
IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with...
|
Datasheet
|
BSM400GB60DN2
|
Overview
BSM 400 GB 60 DN2
IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate
Type BSM 400 GB 60 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
VCE
600V
IC
475A
Package HALF-BRIDGE 2
Ordering Code C67070-A2120-A67
Symbol
Values 600 600
Unit V
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 475 400
TC = 25 °C TC = 60 °C
Pulsed collector current, tp = 1 ms
ICpuls
950 800
TC = 25 °C TC = 60 °C
Power dissipation per IGBT
Ptot
1400
W + 150 -40 .
.
.
+ 125 ≤ 0.
09 ≤ 0.
18 2500 20 11 F 40 / 125 / 56 sec Vac mm K/W °C
TC = 25 °C
Chip temperature Storage temp...
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