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BSM400GB60DN2

Part Number	BSM400GB60DN2
Manufacturer	Siemens Semiconductor Group
Description	IGBT
Published	Mar 23, 2005
Detailed Description	BSM 400 GB 60 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with...
Datasheet	BSM400GB60DN2 PDF File

Overview

BSM 400 GB 60 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 400 GB 60 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE 600V IC 475A Package HALF-BRIDGE 2 Ordering Code C67070-A2120-A67 Symbol Values 600 600 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 475 400 TC = 25 °C TC = 60 °C Pulsed collector current, tp = 1 ms ICpuls 950 800 TC = 25 °C TC = 60 °C Power dissipation per IGBT Ptot 1400 W + 150 -40 .
.
.
+ 125 ≤ 0.
09 ≤ 0.
18 2500 20 11 F 40 / 125 / 56 sec Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.
Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Apr-25-1997 BSM 400 GB 60 DN2 Electric...

Similar Datasheet

BSM400GB60DN2 IGBT - Siemens Semiconductor Group

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