Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
SP8611
Ver 2.
1
PRODUCT SUMMARY
VDSS 20V
ID RDS(ON) (mΩ) Max
12.
5 @ VGS=4.
5V 13.
5 @ VGS=4.
0V 8A 14.
0 @ VGS=3.
7V 15.
0 @ VGS=3.
1V 18.
0 @ VGS=2.
5V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D1 D1 D2 D2
S mini 8
PIN 1
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID Drain Current-Continuous b
IDM -Pulsed a b
TA=25°C TA=70°C
PD
Maximum Power Dissipation
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Ra...