DatasheetsPDF.com

SP8601

SamHop Microelectronics
Part Number SP8601
Manufacturer SamHop Microelectronics
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published Oct 16, 2014
Detailed Description Green Product SP8601 Ver 2.5 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor...
Datasheet PDF File SP8601 PDF File

SP8601
SP8601

Overview
Green Product SP8601 Ver 2.
5 S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 17.
5 @ VGS=4.
5V 18.
5 @ VGS=4.
0V 20V 7.
2A 20.
0 @ VGS=3.
7V 24.
5 @ VGS=3.
1V 27.
0 @ VGS=2.
5V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D1 D1 D2 D2 S mini 8 P IN 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c c TA=25°C TA=70°C TA=25°C TA=70°C Limit 20 ±12 7.
2 5.
8 43 1.
47 0.
94 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 85 °C/W Details are subject to change without notice.
Jul,18,2014 1 www.
samhop.
com.
tw SP8601 Ver 2.
5 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=16V , VGS=0V Min 20 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS= ±8V , VDS=0V 1 ±1 VDS=VGS , ID=1.
0mA VGS=4.
5V , ID=1.
8A VGS=4.
0V , ID=1.
8A VGS=3.
7V , ID=1.
8A VGS=3.
1V , ID=1.
8A VGS=2.
5V , ID=1.
8A VDS=5V , ID=3.
6A 0.
5 12.
0 12.
5 13.
5 14.
5 18.
0 0.
95 14.
5 15.
0 16.
0 18.
5 22.
0 18 1.
5 17.
5 18.
5 20.
0 24.
5 27.
0 V m ohm m ohm m ohm m ohm m ohm S RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge b VDS=10V,VGS=0V f=1.
0MHz 320 106 92 pF pF pF VDD=16V ID=3.
6A...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)