Transistor
2SD2457
Silicon
NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
s Features
q High collector to emitter voltage VCEO.
q Large collector power dissipation PC.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage VCEO
40
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
3A
Collector current IC 1.
5 A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
*...