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D2403

Renesas
Part Number D2403
Manufacturer Renesas
Description 2SD2403
Published Sep 12, 2016
Detailed Description DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEE...
Datasheet PDF File D2403 PDF File

D2403
D2403

Overview
DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current capacitance in small dimension.
This transistor is ideal for DC/DC converters and motor drivers.
FEATURES • High current capacitance • Low collector saturation voltage • Complementary transistor with 2SB1572 PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Base current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) IB(pulse) PT Tj Tstg Conditions PW ≤ 10 ms duty cycle ≤ 50 % PW ≤ 10 ms duty cycle ≤ 50 % 16 cm2 × 0.
7 mm ceramic board mounted Ratings 80 60 6.
0 3.
0 5.
0 0.
2 0.
4 2.
0 150 −55 to +150 Unit V V V A A A A W °C °C The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D16156EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 21090928 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage Collector saturation voltage Collector saturation voltage Base saturation voltage Gain bandwidth product Output capacitance Turn-on time Storage time Fall time Symbol I&%2 I(%2 h)( h)( V%( V&( VDW  V&( VDW  V%( VDW f7 CRE tRQ tVWJ tI Conditions V&% = 80 V, I( = 0 V(% = 6.
0 V, I& = 0 V&( = 2.
0 V, I& = 0.
1 A V&( = 2.
0 V, I& = 1.
0 A V&( = 2.
0 V, I& = 0.
1 A I& = 2.
0 A, I% = 0.
1 A I& = 3.
0 A, I% = 0.
15 A I& = 2.
0 A, I% = 0.
1 A V&( = 10 V, I( = −0.
3 A V&% = 10 V, I( = 0, f = 1 MHz I& = 1.
0 A, V...


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