Low Noise Silicon Bipolar RF
Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 0.
5 mA to 12 mA
• fT = 8 GHz, NFmin = 0.
9 dB at 900 MHz • Two (galvanic) internal isolated
Transistors in
one package • For orientation in reel see package information below • Easy to use Pb-free (RoHS compliant) and halogen
free industry standard package with visible leads • Qualification report according to AEC-Q101 available
BFS481
4
5 6
3 2
1
C1 E2 B2 654
TR2
TR1
123 B1 E1 C2
EHA07196
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFS481
Marking
Pin Configuration
Package
RFs 1=B 2=E 3=C 4=B 5=E 6=C SOT363
1 2013-06-18
BFS481
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