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BFS466L6

Part Number	BFS466L6
Manufacturer	Infineon Technologies AG
Description	NPN Silicon RF TWIN Transistor
Published	Mar 23, 2005
Detailed Description	BFS466L6 NPN Silicon RF TWIN Transistor Preliminary data • Low voltage/ low current applications • Ideal for VCO modules...
Datasheet	BFS466L6 PDF File

Overview

BFS466L6 NPN Silicon RF TWIN Transistor Preliminary data • Low voltage/ low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: TR1: 1.
1dB at 1.
8 GHz TR2: 1.
0 dB at 1.
8 GHz • World's smallest SMD 6-pin leadless package • Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR360L3) $ 6 4 # 6 4 " 4 5 6 1 2 3 ! ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFS466L6 Maximum Ratings Parameter Marking Pin Configuration Package AC 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Symbol VCEO 4.
5 6 VCES 15 15 VCBO 15 15 VEBO 1.
5 2 IC 50 35 1 Sep-01-2003 Value Collector-emitter voltage TR1 TR2 Collector-emitter voltage TR1 TR2 Collector-base voltage TR1 TR2 Emitter-base voltage TR1 TR2 Collector current TR1 TR2 Unit V mA BFS466L6 Maximum Ratings Parameter Base current TR1 TR2 Total power dissipation1) TR1, TS ≤ 104°C TR2, TS ≤ 102°C Junction temperature TR1 TR2 Ambient temperature TR1 TR2 Storage temperature TR1 TR2 Thermal Resistance Parameter Junction - soldering point 2) TR1 TR2 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance Symbol IB Value 5 4 Unit mA Ptot mW 200 210 Tj °C 150 150 TA -65 .
.
.
150 -65 .
.
.
150 T stg -65 .
.
.
150 -65 .
.
.
150 Symbol RthJS ≤ 230 ≤ 230 Value Unit K/W 2 Sep-01-2003 BFS466L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min.
DC Characteristics Collector-emitter breakdown voltage TR1, IC = 1 mA, IB = 0 TR2, IC = 1 mA, IB = 0 Collector-emitter cutoff current TR1, V CE = 15 V, V BE = 0 TR2, V CE = 15 V, V BE = 0 Collector-base cutoff current TR1, V CB = 5 V, IE = 0 TR2, V CB = 5 V, IE = 0 Emitter-base cutoff current TR1, V EB = 0,5 V, IC = 0 TR2, V EB = 1 V, I C = 0 DC current gain TR1, IC = 20 mA, VCE = 3 V TR2, IC = 20 mA, VCE = 3 V hFE 90 130 130 160 IEBO 1 1 ICBO 100 100 µA ICES 10 10 nA V(BR)CEO 4.
5 6...

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BFS466L6 NPN Silicon RF TWIN Transistor - Infineon Technologies AG

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