BFS482
NPN Silicon RF
Transistor
4
For low-noise.
high-gain broadband amplifiers
5 6
at collector currents from 0.
2 mA to 20 mA
f T = 8 GHz
F = 1.
2 dB at 900 MHz
Two (galvanic) internal isolated
2 1
C1 6 E2 5 B2 4
3
Transistors in one package
VPS05604
TR2
TR1
1 B1
2 E1
3 C2
EHA07196
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFS482
Maximum Ratings Parameter
Marking RGs
Pin Configuration
Package
1=B 2=E 3=C 4=B 5=E 6=C SOT363
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 35 4 250 150 -65 .
.
.
150 -65 .
.
.
150 mW °C mA Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base ...