DISCRETE SEMICONDUCTORS
DATA SHEET
BFS540
NPN 9 GHz wideband
transistor
Product specification File under Discrete Semiconductors, SC14 November 1992
Philips Semiconductors
Product specification
NPN 9 GHz wideband
transistor
FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323 envelope.
It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter vo...