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BFS520

INCHANGE
Part Number BFS520
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 7, 2020
Detailed Description isc Silicon NPN RF Transistor INCHANGE Semiconductor BFS520 DESCRIPTION ·Low Noise and High Gain NF = 1.5 dB TYP @VCE ...
Datasheet PDF File BFS520 PDF File

BFS520
BFS520

Overview
isc Silicon NPN RF Transistor INCHANGE Semiconductor BFS520 DESCRIPTION ·Low Noise and High Gain NF = 1.
5 dB TYP @VCE = 6V, IC = 5 mA, f = 1.
0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise amplifier at VHF, UHF ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.
0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.
1 A 150 mW 150 ℃ Tstg Storage Temper...


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