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Part Number
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BGA312 |
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Manufacturer
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Siemens Semiconductor Group |
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Description
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Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
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Published
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Mar 23, 2005 |
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Detailed Description
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BGA 312
Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 11 dB typical gain at 1.0 GHz • 9...
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Datasheet
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BGA312
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Overview
BGA 312
Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 11 dB typical gain at 1.
0 GHz • 9 dBm typical P -1dB at 1.
0 GHz • 3 dB-bandwidth: DC to 2.
0 GHz
1 RF OUT/Bias
3 4 2 1
VPS05178
RF IN
3
Circuit Diagram
2, 4
EHA07312
GND
Type
Marking Ordering Code Q62702-G0042
Pin Configuration 1 RFout/bias 2 GND 3 RFinput
Package 4 GND SOT-143
BGA 312 BMs
Maximum Ratings Parameter Device current
Symbol
Value 60 250 10 150 -65 .
.
.
+150 -65 .
.
.
+150
Unit mA mW dBm °C
ID Ptot PRFin Tj TA T stg
1)
Total power dissipation, T S ≤ 99 °C
RF input power
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point
RthJS
...
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