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BGA312

Siemens Semiconductor Group
Part Number BGA312
Manufacturer Siemens Semiconductor Group
Description Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
Published Mar 23, 2005
Detailed Description BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 11 dB typical gain at 1.0 GHz • 9...
Datasheet PDF File BGA312 PDF File

BGA312
BGA312

Overview
BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 11 dB typical gain at 1.
0 GHz • 9 dBm typical P -1dB at 1.
0 GHz • 3 dB-bandwidth: DC to 2.
0 GHz 1 RF OUT/Bias 3 4 2 1 VPS05178 RF IN 3 Circuit Diagram 2, 4 EHA07312 GND Type Marking Ordering Code Q62702-G0042 Pin Configuration 1 RFout/bias 2 GND 3 RFinput Package 4 GND SOT-143 BGA 312 BMs Maximum Ratings Parameter Device current Symbol Value 60 250 10 150 -65 .
.
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+150 -65 .
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.
+150 Unit mA mW dBm °C ID Ptot PRFin Tj TA T stg 1) Total power dissipation, T S ≤ 99 °C RF input power Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS ≤ 205 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BGA 312 Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Symbol Values Parameter min.
AC characteristics (VD = 4.
7 V, Zo = 5...


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