DISCRETE SEMICONDUCTORS
DATA SHEET
BLF543 UHF power MOS
transistor
Product specification October 1992
Philips Semiconductors
Product specification
UHF power MOS
transistor
FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability • Designed for broadband operation.
1 2 4 g 6
MBB072
BLF543
PIN CONFIGURATION
fpage
d
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS
transistor designed for communications transmitter applications in the UHF frequency range.
The
transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap.
All leads are isolated from the flange.
The devices are marked with ...