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BLF542

NXP
Part Number BLF542
Manufacturer NXP
Description UHF power MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification October 1992 Philips Semicond...
Datasheet PDF File BLF542 PDF File

BLF542
BLF542


Overview
DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch • Designed for broadband operation.
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the UHF frequency range.
The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap.
All leads are isolated from the flange.
PINNING - SOT171 PIN 1 2 3 4 5 6 DESCRIPTION source source gate drain source source WARNING Product and environmental safety - toxic materials 1 3 5 2 4 6 g MBB072 BLF542 PIN CONFIGURATION halfpage d s Top view MBA931 - 1 Fig.
1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package.
The gate-source input must be protected against static charge during transport and handling.
This product contains beryllium oxide.
The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions.
After use, dispose of as chemical or special waste according to the regulations applying at the location of the user.
It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common source test circuit.
MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 28 PL (W) 5 GP (dB) > 13 ηD (%) > 50 October 1992 2 Philips Semiconductors Product specification UHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134).
SYMBOL VDS ±VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature Tmb = 25 °C CONDITIONS − − − − −65 − MIN.
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