DISCRETE SEMICONDUCTORS
DATA SHEET
BLF546 UHF push-pull power MOS
transistor
Product specification October 1992
Philips Semiconductors
Product specification
UHF push-pull power MOS
transistor
FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability • Designed for broadband operation.
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull
transistor designed for communications transmitter applications in the UHF frequency range.
The
transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps.
The mounting flange provides the common source connection for the
transistors.
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