DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D259
BLS3135-65 Microwave power
transistor
Product specification Supersedes data of 1999 May 01 1999 Aug 16
Philips Semiconductors
Product specification
Microwave power
transistor
FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance.
handbook, halfpage
BLS3135-65
PINNING - SOT422A PIN 1 2 3 collector emitter base...