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BLS3135-20

NXP
Part Number BLS3135-20
Manufacturer NXP
Description Microwave power transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D259 BLS3135-20 Microwave power transistor Product specification 2000 Fe...
Datasheet PDF File BLS3135-20 PDF File

BLS3135-20
BLS3135-20

Overview
DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D259 BLS3135-20 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance.
handbook, halfpage BLS3135-20 PINNING - SOT422A PIN 1 2 3 collector emitter base; connected to flange DESCRIPTION 1 APPLICATIONS • Common base class-C pulsed power amplifiers for radar applications in the 3.
1 to 3.
5 GHz range.
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flange.
3 2 3 M...


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