DISCRETE SEMICONDUCTORS
DATA SHEET
BLW30 VHF power
transistor
Product specification September 1991
Philips Semiconductors
Product specification
VHF power
transistor
FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Excellent reliability • Withstands full load mismatch.
DESCRIPTION
NPN silicon planar epitaxial
transistor encapsulated in a 4-lead 3⁄8 inch SOT120 capstan envelope with a ceramic cap.
It is designed for common emitter, class-B operation mobile VHF transmitters with a supply voltage of 12.
5 V.
All leads are isolated from the stud.
PINNING - SOT120 PIN 1 2 3 4 DESCRIPTION collector emitter base emitter
1 3
handbook, halfpage halfpage
BLW30
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