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BLW31

Advanced Semiconductor
Part Number BLW31
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Mar 23, 2005
Detailed Description BLW31 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW31 is an NPN power transistor, designed 108-175 MHz appli...
Datasheet PDF File BLW31 PDF File

BLW31
BLW31

Overview
BLW31 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW31 is an NPN power transistor, designed 108-175 MHz applications.
The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .
380 4L STUD .
112x45° A B C E ØC FEATURES: • Common Emitter-Class-C • PG = 10 dB at 30 W/150 MHz • Omnigold™ Metalization System E B H I J D MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 4.
0 A 36 V 18 V 4.
0 V 40 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 4.
4 °C/W DIM A B C D E F G H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .
220 / 5.
59 .
980 / 24.
89 .
370 / 9.
40 .
004 / 0.
10 .
320 / 8.
13 .
100 / 2.
54 .
450 / 11.
43 .
090 / 2.
29 .
155 / 3.
94 .
230 / 5.
84 .
385 / 9.
78 .
007 / 0.
18 .
330 / 8.
38 .
130 / 3.
30 .
490 / 12.
45 .
100 / 2.
54 .
175 / 4.
45 .
750 / 19.
05 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB PG ηC TC = 25 °C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.
0 V VCB = 28 V VCC = 28 V POUT = 25 ...


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