DISCRETE SEMICONDUCTORS
DATA SHEET
BLW90 UHF power
transistor
Product specification August 1986
Philips Semiconductors
Product specification
UHF power
transistor
DESCRIPTION N-P-N silicon planar epitaxial
transistor suitable for transmitting applications in class-A, B or C in the u.
h.
f.
and v.
h.
f.
range for a nominal supply voltage of 28 V.
The
transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power.
High reliability is ensured by a gold sandwich metallization.
The
transistor is housed in a 1⁄4" capstan envelope with a ceramic cap.
All leads are isolated from the stud.
BLW90
QUICK REFERENCE DATA R.
F.
performance up to Th = 25 °C in an unneu...