Part Number
|
FNK10P18K |
Manufacturer
|
FNK |
Description
|
P-Channel Power MOSFET |
Published
|
Mar 16, 2018 |
Detailed Description
|
FNK P-Channel Enhancement Mode Power MOSFET
Description
The FNK10P18K uses advanced trench technology and design to pro...
|
Datasheet
|
FNK10P18K
|
Overview
FNK P-Channel Enhancement Mode Power MOSFET
Description
The FNK10P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
It is ESD protested.
General Features
● VDS =-100V,ID =-18A RDS(ON) 100mΩ @ VGS=-10V
(Typ:85mΩ)
● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance
Application
● Power management in notebook computer ● Portable equipment and battery powered systems
FNK10P18K
Schematic diagram TO-252 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK10P18K
...
Similar Datasheet