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FNK10P18K

FNK
Part Number FNK10P18K
Manufacturer FNK
Description P-Channel Power MOSFET
Published Mar 16, 2018
Detailed Description FNK P-Channel Enhancement Mode Power MOSFET Description The FNK10P18K uses advanced trench technology and design to pro...
Datasheet PDF File FNK10P18K PDF File

FNK10P18K
FNK10P18K

Overview
FNK P-Channel Enhancement Mode Power MOSFET Description The FNK10P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
It is ESD protested.
General Features ● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Application ● Power management in notebook computer ● Portable equipment and battery powered systems FNK10P18K Schematic diagram TO-252 top view Package Marking and Ordering Information Device Marking Device Device Package FNK10P18K ...


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