MRA1417-2

MRA1417-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-2 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz. FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting • Input Matching MAXIMUM RATINGS IC 0.5 A VCBO 50 V PDISS 12 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 1...